• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    A current sensor (1) according to the invention comprises a current conductor (3) having a first section (8), a measuring section (9) and a second section (10), the first section (8) having one or more first electrical connections (5) and the second section (10) includes one or more second electrical connections (6). The current sensor (1) further comprises third electrical connections (7) and a semiconductor chip (4). The semiconductor chip (4) has one or more magnetic field sensors (13), which are arranged in an active surface, and is mounted on the current conductor (3), the active surface facing the current conductor (3). The active area comprises first contacts (14). The semiconductor chip (4) comprises electrical vias, which are arranged above the first contacts (14) and are electrically connected thereto. A back side of the semiconductor chip (4) comprises second contacts (17), wherein each of the second contacts (17) is electrically connected to one of the electrical feedthroughs. Wire connections (19) electrically connect the second contacts (17) to the third electrical connections (7). Furthermore, the invention relates to a method for producing a current sensor.
    公开号:CH713241A2
    申请号:CH01366/17
    申请日:2017-11-13
    公开日:2018-06-15
    发明作者:Boury Bruno；Cacciato Antonino；Chen Jian；Dupont Guido；Racz Robert
    申请人:Melexis Tech Sa；
    IPC主号:
    专利说明:

    Description TECHNICAL FIELD The invention relates to a current sensor housed in an IC (Integrated Circuit) package and having an integrated current conductor through which a current to be measured flows. The invention further relates to a method for producing such a current sensor.
    Background of the Invention Current sensors are available in many configurations and variants. Current sensors which detect the magnetic field generated by the current, which are housed in a conventional IC package and in which the current conductor through which the current to be measured flows through the housing, are e.g. known from US 7 129 691, WO 2005 026 749, WO 2006 130 393 and US 2010 156 394. Such current sensors include a current conductor, which is formed as part of a lead frame, which is used for mounting and manufacturing the electrical connections, and a semiconductor chip mounted on the leadframe, the semiconductor chip including at least one magnetic field sensor and the electronics required for its operation and processing of its output signal.
    Today's current sensors must meet many requirements, in particular high sensitivity, temperature and voltage resistance, high dielectric strength of typically 2 to 4 kV between conductor and electronics and ultimately low production costs.
    Brief Description of the Invention The object of the invention is the development of a highly reliable and easily manufactured current sensor.
    The above object is achieved by the features of independent claims 1 and 11. Advantageous embodiments will be apparent from the dependent claims.
    A current sensor according to the invention comprises a housing, a first lead frame part which forms a current conductor with a first section, a measuring section and a second section, the first section having one or more first electrical connections and the second section one or more second electrical connections and second lead frame parts forming third electrical leads, and a semiconductor chip having an active surface and a backside, the semiconductor chip having one or more magnetic field sensors disposed in or on the active surface, the semiconductor chip mounted on the first lead frame part wherein the active surface faces the first leadframe portion, the active surface of the semiconductor chip comprises first contacts, the semiconductor chip comprises electrical vias disposed over and electrically connected to the first contacts, the R the back of the semiconductor chip comprises second contacts, each of which is electrically connected to one of the electrical vias, the second contacts are electrically connected to the third electrical terminals, and a number of first contacts, electrical vias and second contacts is at least three. The at least three correspondingly interconnected first contacts, vias and second contacts serve for the power supply and the output of a measured current dependent output signal.
    The electrical feedthroughs may be called through silicon vias (TSV), i. Silicon through contacts, be. The second contacts are electrically connected to the third electrical terminals, preferably by wires, so-called "wire bonds". The current sensor may further include one or more insulating layers disposed between the active surface of the semiconductor chip and the current conductor and at least partially covering the active surface. Preferably, at least one or more insulation layers protrude beyond two or more edges of the semiconductor chip. The one or more insulating layers may include a ceramic plate. The first and second terminals are located at two housing edges, preferably at three housing edges, to minimize the ohmic resistance. The first contacts may be covered with a passivation layer. A metallic layer may be disposed between at least a portion of the electronic circuit and the conductor, wherein the metallic layer is electrically connected to one of the first contacts.
    A method for producing a current sensor according to the invention comprises
    Providing a leadframe having a first leadframe part, second leadframe parts, and a frame interconnecting the first and second leadframe parts, the first leadframe part forming a current conductor having a first portion, a measurement portion, and a second portion, the first portion one or more first electrical connections and the second section has one or more second electrical connections, and wherein the second conductor frame sections form third electrical connections,
    Providing a semiconductor chip having one or more magnetic field sensors disposed in or on an active surface, first contacts disposed on the active surface, electrical vias disposed over and electrically connected to the first contacts, and second contacts comprising, disposed on a back side of the semiconductor chip, each of the second contacts being electrically connected to one of the electrical vias, the back side facing the active surface, and a number of the first contacts, electrical vias, and second contacts being at least three,
    Mounting the semiconductor chip on the first lead frame part, the active surface facing the first lead frame part,
    Making electrical connections between the second contacts and the third electrical terminals, making a housing, and cutting off the frame of the leadframe.
    The preparation of electrical connections between the second contacts and the third electrical connections is preferably carried out by making wire connections between the second contacts and the third electrical connections.
    BRIEF DESCRIPTION OF THE DRAWINGS The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate one or more embodiments of the present invention and, together with the detailed description, serve to explain the principles and embodiments of the invention. The figures are not true to scale.
    1 shows a plan view of the underside of a current sensor according to the invention,
    2 shows a cross section of the current sensor,
    3, 4 show plan views of the underside of further embodiments of the inventive current sensor,
    Fig. 5 shows a cross-section of a silicon via ([TSV]), and
    6 shows a cross section of a further embodiment of a current sensor according to the invention.
    DETAILED DESCRIPTION OF THE INVENTION FIGS. 1 and 2 illustrate an exemplary embodiment of a current sensor 1 according to the invention. FIG. 1 shows a plan view of the underside of the current sensor 1, and FIG. 2 shows a cross-section along the line II of FIG In Fig. 1, many elements are shown as if they were transparent. The current sensor 1 comprises a plastic housing 2, a conductor 3, a semiconductor chip 4 and one or more first electrical connections 5, one or more second electrical connections 6 and at least three third electrical connections 7. The electrical connections 5, 6 and 7 are along the Edges of the housing 2 are arranged and are exposed on the outside of the housing 2. In this embodiment, the housing 2 is a so-called QFN housing (Quad Fiat No leads package). The current conductor 3 is formed from a first conductor frame part with a first section 8, a measuring section 9 and a second section 10. The first section 8 includes the one or more first electrical connections 5, the second section 10 includes the one or more second electrical connections 6. The electrical connections 5 and 6 are those parts of the first section 8 and the second section 10 of the leadframe which are exposed on the outside of the housing 2 and which serve to connect the current conductor 3 with an external (interrupted or uninterrupted) conductor of a printed circuit board or the like. The contour of each of the first and second electrical terminals 5 and 6 is indicated by a solid line. The one or more first electrical connections 5 and the one or more second electrical connections 6 are those parts of the current conductor 3 which serve to conduct a current to be measured to and from the outside of the housing 2 Current sensor 1 mounted on a printed circuit board or the like, and the current to be measured is supplied through the one or more first terminals 5, flows through the first section 8, the measuring section 9 and the second section 10 and is through the one or more second terminals 6 discharged. The measuring section 9 and adjacent sections of the first section 8 and the second section 10 may be cast into the housing 2 or be flush with the housing 2 and in this case exposed on the outside of the housing 2. The third electrical connections 7 serve to supply power to the semiconductor chip 4 and to output at least one output signal which depends on the current flowing through the measuring section 9. Additional third terminals 7 may be provided to test or configure the electronic circuit, for example to adjust the sensitivity of the current sensor 1 in a calibration phase. The first section 8, the measuring section 9, the second section 10 and the terminals 5-7 are all made of the same material, e.g. a metallic lead frame whose frame is cut at the end of the manufacturing process.
    FIGS. 3 and 4 illustrate two further embodiments of a current sensor 1 according to the invention and, like FIG. 1, show a plan view of the underside of the current sensor 1. The exemplary embodiments shown in FIGS. 1, 3 and 4 differ from one another in FIG Number and placement of the first terminals 5 and the second terminals 6 and the layout of the conductor 3. It is preferable that there are as many first electrical terminals 5 and as many second electrical terminals 6 as possible to the ohmic resistance between the external conductor and the conductor 3 to minimize. The first and second terminals are therefore preferably arranged on three sides of the housing 2 as illustrated in Figs. 1 and 3. In the embodiment shown in FIG. 4, the first electrical connections 5 and the second electrical connections 6 are arranged on two opposite sides of the housing 2. In certain applications, however, it may also have only a first electrical connection 5 and only a second electrical connection 6.
    The semiconductor chip 4 has an active surface 11 and a back side 12 facing the active surface 11. The active surface 11 includes one or more magnetic field sensors 13, and preferably also electronic circuits for operating the one or more magnetic field sensors 13 and outputting at least one output signal. The one or more magnetic field sensors 13 are preferably sensitive to that component of the magnetic field generated by the current flowing through the measuring section 9, which runs in the Z direction and are therefore placed next to the measuring section 8 of the current conductor 3. The one or more magnetic field sensors 13 may alternatively be sensitive to that component of the magnetic field generated by the current flowing through the measuring section 9, which runs in the X direction and are in this case placed above the measuring section 8 of the current conductor 3. The one or more magnetic field sensors 13 may be e.g. Hall elements, AMR (Anisotropy Magneto Resistive) sensors, GMR (Giant Magneto Resistive) sensors and / or Hall elements with magnetic field concentrators. The one or more magnetic field sensors 13 may be fabricated in CMOS technology and therefore disposed in the active surface 11. Alternatively, they may be fabricated in another technology using, for example, a GaAs substrate, which is then placed on the active surface 11 of the semiconductor chip 4.
    The semiconductor chip 4 comprises a number of first contacts 14, which are arranged at the active surface 11, an equal number of electrical vias and an equal number of second contacts 17, which are arranged on the back 12. The second contacts 17 are also referred to as redistributed con-tacts, since a redistribution layer is normally used to fabricate and place them in the desired locations. In the present embodiment, the electrical feedthroughs are so-called TSV's 15 (Through Silicon Vias). The second contacts 17 are located in the vicinity of the third electrical connections 7. The electrical feedthroughs, here the TSVs 15, are arranged above the first contacts 14. The second contacts 17 are laterally offset to the TSV's 15. The first contacts 14 are preferably made of Cu or Al or contain Cu or Al. Al may be used in combination with Si and / or Cu, e.g. as an AlSiCu alloy or as an AICu alloy. The TSVs 15 comprise a number of different layers, e.g. a sidewall passivation layer, a barrier / adhesion layer, a seed layer and a metal layer (sidewall passivation layer, barrier / adhesion layer, seed layer and metal layer). The barrier layer may be, for example, a layer containing Ti, e.g. a TiN layer, the seed layer may be a copper layer, and the metal layer may also be a copper layer, in particular, electroplated, i. electroplated, copper. Other combinations of the layers are also possible, e.g. a barrier layer of TiW, a seed layer of W and a layer of Cu, or W or AICu. The seed layer and the metal layer may also be used to form the second contacts 17. Alternatively, various conductive materials may be used for the TSVs 15 and the second contacts 17. A number of different methods may be used to apply the conductive materials, including electroplating, PVD (Physical Vapor Deposition), PE-CVD (Plasma Enhanced Chemical Vapor Deposition) and MOCVD (Metal Organic Chemical Vapor Deposition). Thus, each of the first contacts 14 is electrically connected by one of the TSVs 15 and a metal track to one of the second contacts 17. Therefore, the TSVs 15 provide electrical connections between the first contacts 14 disposed on the active surface 11 and the second contacts 17 disposed on the back surface 12 of the semiconductor chip 4.
    The semiconductor chip 4 is mounted on the current conductor 3, wherein the active surface 11 faces the current conductor 3. The second contacts 17 are electrically connected to the third electrical terminals 7, preferably by wire bonds 19.
    In order to achieve high dielectric strength, the semiconductor chip 4 is preferably provided with one or more insulation layers 16 applied to the active surface 11, which preferably completely cover the active surface 11 but at least partially cover the active surface 11, namely the part the active surface 11, which lies directly above the conductor 3. It is even more preferable if at least one of the one or more insulation layers 16 protrudes at least 0.4 mm beyond at least two of the edges of the semiconductor chip 4. The one or more insulation layers 16 thus ensure everywhere between the conductor 3 and the semiconductor chip 4 for a minimum insulation distance of 0.4 mm. The one or more insulating layers 16 may be a ceramic plate
    权利要求:
    Claims (13)
    [1]
    Tape or a die-attached film (DAF) included. In addition, the minimum distance between any part of the conductor 3 and the third electrical terminals 7 is at least 4 mm, in some cases at least 7 mm. Additionally or alternatively, a passivation layer, in particular a passivation layer of silicon dioxide or silicon nitride or polyimide, cover the first contacts 14 in order to achieve high-voltage insulation between the electronics and the current conductor 3. Figure 5 shows a cross section of a TSV 15. The TSV 15 is a hole placed over a first contact 14 and connected to an electrically conductive layer, e.g. a metal layer 21 is provided. The metal layer 21 establishes an electrical connection between the first contact 14 and a second contact 17. The first contact 14 is located on the active surface 11, the second contact 17 on the back 12 of the semiconductor chip 4. The TSV 15 may have a circular cross section with a diameter of typically about 50 microns, but also any other suitable cross section and / or any other size. The bore of the TSV 15 is manufactured in a REE (Reactive Ion Etching) process. Therefore, the sidewalls of the TSV 15 are essentially vertical walls. For manufacturing the TSV 15, as described above, layers of different materials were used, including a sidewall passivation layer 22, an adhesion / barrier layer, and a seed layer deposited on the adhesion / barrier layer, these two layers being designated by reference numeral 23, and the metal layer 21. In another embodiment, the housing may be an SOIC housing in which the first, second and third electrical connections 5-7 protrude from the housing 2. The metal layer used to make the electrical connections between the second contacts 17 and the TSVs 15 may also at least partially cover the remaining portion of the back surface 12 to provide electromagnetic shielding. The active surface 11 of the semiconductor chip 4 includes one or more patterned metal layers to make electrical connections between the electrical components including the magnetic field sensors. One of the metal layers may be disposed at least over the magnetic field sensors and / or some analog parts of the electronic circuit and electrically connected to ground (GND) in use to reduce the capacitive coupling between the semiconductor chip 4 and the current conductor 3 and thus the effect electromagnetic interference induced by the conductor 3 to reduce or eliminate. Digital parts of the electronics can also be covered with this metal layer. Therefore, the metal layer can be connected either to that of the first contacts 14, which is connected via a corresponding TSV 15 to the third electrical connection 7, which is used to supply the electronic circuit of the semiconductor chip 4 with the GND of the power supply, or with an additional first contact 14, which is located under an additional TSV 15 and thus connected to an additional second contact 17, which is connected via a wire connection to an additional third terminal 7 which is connected to GND. Fig. 6 shows a cross-section through an embodiment of a current sensor 1 with such a grounded metal layer 20. The invention offers several advantages: The first and second electrical connections used to connect the conductor to the outside can be used three housing edges are arranged. As many first and second electrical connections as possible can be made as each of these connections reduces the ohmic resistance. - The active surface of the semiconductor chip is completely isolated from the conductor and thus provides a high dielectric strength. - The smallest distance between the conductor and one of the third electrical connections is relatively large, which improves the dielectric strength. - Cracks between the solder balls and the third electrical connections, which often arise when using the flip-chip technology by thermal fluctuations, are eliminated. - The wire bonding technology guarantees a high robustness of the current sensor against damage and this at low cost. While embodiments of this invention have been shown and described, it will be apparent to those skilled in the art that more modifications than mentioned above are possible without departing from the inventive concept. The invention is therefore limited only by the claims and their equivalents. claims
    A current sensor (1) comprising a housing (2), a first lead frame part forming a current conductor (3) having a first portion (8), a measuring portion (9) and a second portion (10), the first portion (8) one or more first electrical connections (5) and the second section (10) comprises one or more second electrical connections (6), and second conductor frame sections, which form third electrical connections (7), and a semiconductor chip (4) an active surface (11) and a back side (12), the semiconductor chip (4) having one or more magnetic field sensors (13) arranged in or on the active surface (11), the semiconductor chip (4) on the first one Ladder frame part is mounted, wherein the active surface (11) faces the first lead frame portion, the active surface (11) of the semiconductor chip (4) comprises first contacts (14), the semiconductor chip (4) comprises electrical feedthroughs over the arranged and electrically connected to the first contacts (14), the back side of the semiconductor chip (4) comprises second contacts (17), each of which is electrically connected to one of the electrical vias, the second contacts (17) electrically connected to the third electrical Terminals (7) are connected, and a number of the first contacts (14), electrical feedthroughs and second contacts (17) is at least three.
    [2]
    2. Current sensor according to claim 1, wherein the electrical plated-through holes are silicon plated through holes (15).
    [3]
    3. Current sensor according to claim 1 or 2, wherein the second contacts (17) with the third electrical terminals (7) are electrically connected by wire connections (19).
    [4]
    4. Current sensor according to one of claims 1 to 3, further comprising one or more insulating layers (16) which are arranged between the active surface (11) of the semiconductor chip (4) and the current conductor (3) and the active surface (11) at least partially cover.
    [5]
    5. Current sensor according to claim 4, wherein at least one of the one or more insulating layers (60) projects beyond two or more edges of the semiconductor chip (4).
    [6]
    6. Current sensor according to claim 4 or 5, wherein the one or more insulating layers (16) enclose a ceramic plate.
    [7]
    A current sensor according to any one of claims 1 to 6, wherein the first and second terminals (5; 6) are disposed at three edges of the housing (2).
    [8]
    8. Current sensor according to one of claims 1 to 7, wherein the first contacts (14) are covered with a passivation layer.
    [9]
    A current sensor according to any one of claims 1 to 8, wherein a metal layer is disposed between at least parts of an electronic circuit disposed in the active surface (11) and the current conductor (3), the metal layer being electrically connected to one of the first Contacts (14) is connected.
    [10]
    10. A method of making a current sensor comprising providing a lead frame having a first lead frame part, second lead frame parts, and a frame interconnecting the first and second lead frame parts, the first lead frame part including a current conductor having a first portion (8), a measuring section (9) and a second section (10), wherein the first section (8) has one or more first electrical connections (5) and the second section (10) has one or more second electrical connections (6). and wherein the second leadframe parts form third electrical connections (7), providing a semiconductor chip (4) which has one or more magnetic field sensors (13) arranged in or on an active surface (11) of the semiconductor chip (4) Contacts (14), which are arranged on the active surface (11), electrical vias disposed above the first contacts (14) and electrically connected thereto, and comprising second contacts (17) arranged on a back side (12) of the semiconductor chip (4), each of the second contacts (17) being electrically connected to one of the electrical vias, the rear side (12 ) is disposed opposite the active surface (11) and a number of the first contacts (14), electrical vias and second contacts (17) is at least three, mounting the semiconductor chip (4) on the first lead frame part, the active surface (11 facing the first lead frame part, making electrical connections between the second contacts (14) and the third electrical leads (7), making a housing (2), and cutting off the frame of the lead frame.
    [11]
    11. The method according to claim 10, wherein the electrical feedthroughs are silicon plated through holes (15).
    [12]
    12. The method according to claim 10 or 11, wherein the establishment of electrical connections between the second contacts (17) and the third electrical terminals (7), the manufacture of wire connections (19) between the second contacts (17) and the third electrical connections (7).
    [13]
    13. The method according to any one of claims 10 to 12, wherein the first and second terminals (5; 6) are arranged on three edges of the housing (2).
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    法律状态:
    2020-12-15| AZW| Rejection (application)|
    优先权:
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